DEVICE MODEL FOR AN ION-IMPLANTED BURIED CHANNEL MOSFET AND BURIED-CHANNEL CCD

被引：0

作者：

TAYLOR, GW ^{[1
]}

CHATTERJEE, PK ^{[1
]}

CHAO, HH ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,CENT RES LABS,DALLAS,TX 75222

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 11期

关键词：

D O I：

10.1109/T-ED.1978.19330

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1353 / 1353

页数：1

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