RADIATION RESISTANT MOS DEVICES

被引：16

作者：

LINDMAYER, J

NOBLE, WP

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1968年 / ED15卷 / 09期

关键词：

D O I：

10.1109/T-ED.1968.16420

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：637 / +

页数：1

共 16 条

[1]

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[3]

DENNEHY NJ, 1967 IEEE ANN C NUCL

[4] A RADIATION-INDUCED INSTABILITY IN SILICON MOS TRANSISTORS [J].

DENNEHY, WJ ;

BRUCKER, GJ ;

HOLMESSI.AG .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :273-&

[5] EFFECTS OF SPACE RADIATION OF MOSFET DEVICES AND SOME APPLICATION IMPLICATIONS OF THOSE EFFECTS [J].

GORDON, F ;

WANNEMAC.HE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :262-&

[6] STABILIZATION OF MOS DEVICES [J].

HOFSTEIN, SR .

SOLID-STATE ELECTRONICS, 1967, 10 (07) :657-+

[7]

Hughes H. L., 1964, ELECTRONICS, V37, P58

[8] INFLUENCE OF HEAT TREATMENTS AND IONIZING IRRADIATIONS ON CHARGE DISTRIBUTION AND NUMBER OF SURFACE STATES IN SI-SIO2 SYSTEM [J].

KOOI, E .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) :238-+

[9] FIELD EFFECT STUDIES OF OXIDIZED SILICON SURFACE [J].

LINDMAYER, J .

SOLID-STATE ELECTRONICS, 1966, 9 (03) :225-+

[10] INVERSION OF OXIDIZED SILICON SURFACES BY ALKALI METALS [J].

MATHEWS, JR ;

GRIFFIN, WA ;

OLSON, KH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (09) :899-&

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