TIME-RESOLVED PHOTOLUMINESCENCE MEASUREMENTS IN SPARK-PROCESSED BLUE AND GREEN EMITTING SILICON

被引:23
作者
HUMMEL, RE [1 ]
LUDWIG, MH [1 ]
CHANG, SS [1 ]
FAUCHET, PM [1 ]
VANDYSHEV, JV [1 ]
TSYBESKOV, L [1 ]
机构
[1] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14627
关键词
NANOSTRUCTURES; SEMICONDUCTORS; NANOFABRICATIONS; OPTICAL PROPERTIES; LUMINESCENCE;
D O I
10.1016/0038-1098(95)00224-3
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Time-resolved photoluminescence (PL) measurements on spark-processed Si (sp-Si) are compared with those on dry-oxidized porous Si (p-Si). Both types of substances yield non-exponential decay times in the nanosecond region which are essentially independent of the detection wavelength. However, subtle differences between photoluminescing sp-Si and oxidized p-Si exist. Specifically, blue/violet emitting sp-Si has a peak wavelength near 410nm (3 eV) under steady state conditions whereas oxidized p-Si luminesces with a maximum centred around 460-480 nm (2.7-2.58 eV). Further differences include the peak structures in the PL spectra, the decay dynamics, and certain features in the lifetime distribution. It is concluded from the data that sp-Si and p-Si derive their PL from somewhat different mechanisms. Moreover, differences in decay times between SiO2 and sp-Si suggest that silica does not seem to be the major cause for PL in sp-Si.
引用
收藏
页码:553 / 557
页数:5
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