VERTICAL MOS TECHNOLOGY WITH SUB-0.1-MU-M CHANNEL LENGTHS

被引：31
作者：
GOSSNER, H
WITTMANN, F
EISELE, I
GRABOLLA, T
BEHAMMER, D
机构：
[1] INST HALBLEITERPHYS,D-15230 FRANKFURT,GERMANY
[2] RUHR UNIV BOCHUM,D-44780 BOCHUM,GERMANY
[3] SIEMENS AG,DEPT SEMICOND DEVICES,D-81541 MUNICH,GERMANY
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 16期
关键词：
MOLECULAR BEAM EPITAXIAL GROWTH; MOSFETS;
D O I：
10.1049/el:19950890
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A vertical MOSFET with a channel length of 85nm has been fabricated by molecular beam epitaxy. Compared to previous work, the electrical behaviour has been greatly improved, allowing the use of standard simulation tools for analysing the I-V characteristics. From experimental and theoretical results, we conclude that for vertical MOSFETs, the useful minimum channel length is not limited by the technological constraints but by the physical limits of the electrical performance. The useful minimum channel length is estimated ro be similar to 80nm.
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收藏
页码：1394 / 1396
页数：3
相关论文
共 6 条
[1]   VERTICAL SI-METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS WITH CHANNEL LENGTHS OF 50 NM BY MOLECULAR-BEAM EPITAXY [J].
GOSSNER, H ;
EISELE, I ;
RISCH, L .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B) :2423-2428
[2]  
GOSSNER H, 1994, THESIS U BUNDESWEHR
[3]   DEPENDENCE OF ELECTRON CHANNEL MOBILITY ON SI-SIO2 INTERFACE MICROROUGHNESS [J].
OHMI, T ;
KOTANI, K ;
TERAMOTO, A ;
MIYASHITA, M .
IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :652-654
[4]  
ONO M, 1993, P IEDM, P119
[5]   DESIGN AND EXPERIMENTAL TECHNOLOGY FOR 0.1-MU-M GATE-LENGTH LOW-TEMPERATURE OPERATION FETS [J].
SAIHALASZ, GA ;
WORDEMAN, MR ;
KERN, DP ;
GANIN, E ;
RISHTON, S ;
ZICHERMAN, DS ;
SCHMID, H ;
POLCARI, MR ;
NG, HY ;
RESTLE, PJ ;
CHANG, THP ;
DENNARD, RH .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (10) :463-466
[6]  
1994, CVT MOBILITY MODEL A
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