Single-Crystal Growth of Sapphire

被引：68

作者：

Cockayne, B. ^{[1
]}

Chesswas, M. ^{[1
]}

Gasson, D. B. ^{[1
]}

机构：

[1] Royal Radar Estab, Malvern, Worcs, England

来源：

JOURNAL OF MATERIALS SCIENCE | 1967年 / 2卷 / 01期

关键词：

D O I：

10.1007/BF00550046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Two techniques are described by which single crystals of sapphire may be grown. One is a development of the vertical-pulling technique for the production of scatter-free, low-dislocation-density material, whilst the other is an extension of a floating-zone, recrystallisation technique previously used for calcium tungstate. The origin and control of defects in crystals grown by these techniques are discussed.

引用

页码：7 / 11

页数：5

共 8 条

[1]

BARDSLEV W, 1966, J PHYS CHEM IN PRESS

[2]

COCKAYNE A, 1966, J AM CERAM SOC, V49, P204

[3] CALCIUM FLUORIDE - SLIP + POLYGONIZATION DURING CRYSTAL GROWTH [J].

COCKAYNE, B ;

STRAUGHAN, BW ;

ROBERTSON, DS .

NATURE, 1964, 203 (495) :1376-+

[4] GROWTH DEFECTS IN CALCIUM TUNGSTATE SINGLE CRYSTALS [J].

COCKAYNE, B ;

ROBERTSON, DS ;

BARDSLEY, W .

BRITISH JOURNAL OF APPLIED PHYSICS, 1964, 15 (10) :1165-&

[5] PREPARATION OF CALCIUM TUNGSTATE CRYSTALS BY A MODIFIED FLOATING ZONE RECRYSTALLIZATION TECHNIQUE [J].

GASSON, DB .

JOURNAL OF SCIENTIFIC INSTRUMENTS, 1965, 42 (02) :114-&

[6]

JOYCE BA, 1965, T METALL SOC AIME, V233, P556

[7]

NASSAU K, 1964, LAPIDARY J, V18, P42

[8] CZOCHRALSKI GROWTH OF SAPPHIRE [J].

PALADINO, AE ;

ROITER, BD .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1964, 47 (09) :465-465

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