NANOSCALE INP ISLANDS FOR QUANTUM BOX STRUCTURES BY HYDRIDE VAPOR-PHASE EPITAXY

被引：91

作者：

AHOPELTO, J

YAMAGUCHI, AA

NISHI, K

USUI, A

SAKAKI, H

机构：

[1] TECH RES CTR FINLAND,SEMICOND LAB,SF-02150 ESPOO,FINLAND

[2] NEC CORP LTD,OPTOELECTR RES LABS,TSUKUBA,IBARAKI 305,JAPAN

[3] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA,IBARAKI 305,JAPAN

[4] UNIV TOKYO,INST IND SCI,MINATO KU,TOKYO 106,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1993年 / 32卷 / 1A-B期

关键词：

INP; VPE; ISLAND GROWTH; QUANTUM BOX; PHOTOLUMINESCENCE;

D O I：

10.1143/JJAP.32.L32

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel method utilizing the island formation in hydride vapor phase epitaxy VPE is used to fabricate structures in which nanoscale InP islands are buried in InGaP. The method allows the structures to be grown without using photolithography or etching steps. An intense, island-related photoluminescence is observed from the structures. The emission is blueshifted from the InP bulk emission wavelength and shows dependence on the island size. The island formation dependence on growth conditions is investigated in the attempt to be able to control the size and the density of the islands.

引用

页码：L32 / L35

页数：4

共 6 条

[1] INAS QUANTUM DOTS IN A SINGLE-CRYSTAL GAAS MATRIX [J].

BRANDT, O ;

TAPFER, L ;

PLOOG, K ;

BIERWOLF, R ;

HOHENSTEIN, M ;

PHILLIPP, F ;

LAGE, H ;

HEBERLE, A .

PHYSICAL REVIEW B, 1991, 44 (15) :8043-8053

[2]

GREENE R A, 1989, Magnetic Resonance Imaging, V7, P111

[3] NEW MBE GROWTH METHOD FOR INSB QUANTUM-WELL BOXES [J].

KOGUCHI, N ;

TAKAHASHI, S ;

CHIKYOW, T .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :688-692

[4] GROWTH MODE AND STRAIN RELAXATION DURING THE INITIAL-STAGE OF INXGA1-XAS GROWTH ON GAAS(001) [J].

LENTZEN, M ;

GERTHSEN, D ;

FORSTER, A ;

URBAN, K .

APPLIED PHYSICS LETTERS, 1992, 60 (01) :74-76

[5]

OLSON JM, 1989, COMPOUND SEMICONDUCT, P59

[6]

YAMAGUCHI AA, 1992, 19TH P INT S GALL AR

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