HOT-ELECTRON INTERACTIONS AT THE PASSIVATED GOLD-SILICON INTERFACE

被引：25

作者：

HALLEN, HD ^{[1
]}

HUANG, T ^{[1
]}

FERNANDEZ, A ^{[1
]}

SILCOX, J ^{[1
]}

BUHRMAN, RA ^{[1
]}

机构：

[1] CORNELL UNIV,CTR MAT SCI,ITHACA,NY 14853

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 20期

关键词：

D O I：

10.1103/PhysRevLett.69.2931

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A few-eV hot electron is found to stimulate the motion of a gold atom, leading to a atom generation at the surfaces of a Au film. This is detected through ballistic electron emission microscopy (BEEM) observations of the resulting growth of an atomic layer terrace on the interfacial Au surface of Au/passivation-layer/Si samples. We deduce the presence of concurrently produced vacancies in the film from their (time-dependent) effect on the BEEM current. The phenomenon has similarities to electron-stimulated desorption.

引用

页码：2931 / 2934

页数：4

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