EFFECTS OF CO-60 GAMMA IRRADIATION ON EPITAXIAL GAAS LASER DIODES

被引:52
作者
BARNES, CE
机构
来源
PHYSICAL REVIEW B-SOLID STATE | 1970年 / 1卷 / 12期
关键词
D O I
10.1103/PhysRevB.1.4735
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:4735 / +
页数:1
相关论文
共 43 条
[1]   LUMINESCENCE IN INTRINSIC AND ANNEALED ELECTRON-IRRADIATED GAAS - CD [J].
ARNOLD, GW .
PHYSICAL REVIEW, 1969, 183 (03) :777-&
[2]   RADIATIVE RECOMBINATION IN ANNEALED ELECTRON-IRRADIATED GAAS [J].
ARNOLD, GW .
PHYSICAL REVIEW, 1966, 149 (02) :679-&
[3]   EFFECTS OF RADIATION DAMAGE ON BEHAVIOR OF GAAS P-N JUNCTIONS [J].
AUKERMAN, LW ;
MILLEA, MF ;
MCCOLL, M .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :174-&
[4]   BAND-FILLING CURRENT IN HEAVILY DOPED GAAS DIODES [J].
AUKERMAN, LW ;
MILLEA, MF .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (08) :2585-&
[5]   ANNEALING OF ELECTRON-IRRADIATED GAAS [J].
AUKERMAN, LW ;
GRAFT, RD .
PHYSICAL REVIEW, 1962, 127 (05) :1576-&
[6]   DIFFUSION LENGTHS OF ELECTRONS AND HOLES IN GAAS [J].
AUKERMAN, LW ;
MILLEA, MF ;
MCCOLL, M .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :685-&
[7]  
BAGAEV VS, 1964, 7 C PHYS SEM REC RAD, P149
[8]   THERMAL AND INJECTION ANNEALING OF NEUTRON-IRRADIATED P-TYPE SILICON BETWEEN 76 DEGREES K AND 300 DEGREES K [J].
BARNES, CE .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) :28-+
[9]   MECHANISMS OF RADIATION EFFECTS ON LASERS [J].
COMPTON, DMJ ;
CESENA, RA .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1967, NS14 (06) :55-+
[10]  
CORBETT JW, 1966, ELECTRON RADIATION D