GRAIN-BOUNDARY EFFECT ON THE ELECTRICAL CHARACTERISTICS OF AU-N-GASB SCHOTTKY DIODES

被引：0

作者：

BASU, S

ROY, UN

机构：

[1] Materials Science Centre, Indian Institute of Technology, Kharagpur

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 8卷 / 01期

关键词：

D O I：

10.1016/0921-5107(91)90013-L

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Schottky diodes were fabricated by depositing gold on a single grain and on grains incorporating a grain boundary of tellurium-doped GaSb crystals grown by the vertical Bridgman method. The barrier height (phi-Bn), series resistance (R), dark saturation current density (J(s)) and the ideality factor (n) calculated from the I-V and C-V relations and from the relation of Cheung have been compared. Higher J(s) and n values are a result of tunnelling phenomena and heavy doping concentrations of the GaSb samples.

引用

页码：1 / 3

页数：3

共 7 条

[1]

BURDIYAN II, 1973, SOV PHYS SEMICOND+, V7, P499

[2] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].