ONO TECHNOLOGY

被引:23
作者
HONLEIN, W
REISINGER, H
机构
关键词
D O I
10.1016/0169-4332(89)90432-7
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:178 / 191
页数:14
相关论文
共 25 条
[1]   INTERFACIAL TUNNELING BARRIER HEIGHTS IN TRIPLE-LAYER DIELECTRICS [J].
BAUNACH, R ;
SPITZER, A .
APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :180-185
[2]   THERMAL-OXIDATION RATE OF A SI3N4 FILM AND ITS MASKING EFFECT AGAINST OXIDATION OF SILICON [J].
ENOMOTO, T ;
ANDO, R ;
MORITA, H ;
NAKAYAMA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (06) :1049-1058
[3]  
Grunthaner F. J., 1986, Material Science Reports, V1, P65, DOI 10.1016/S0920-2307(86)80001-9
[4]  
Imai K., 1986, Extended Abstracts of the 18th (1986 International) Conference on Solid State Devices and Materials, P303
[5]  
KAO DB, 1987, IEEE T ELECTRON DEV, V34, P1008
[6]  
KAPOOR VJ, 1983, J VACUUM SCI TECHN A, V1, P60
[7]   YTTRIUM-OXIDE SILICON DIOXIDE - A NEW DIELECTRIC STRUCTURE FOR VLSI ULSI CIRCUITS [J].
MANCHANDA, L ;
GURVITCH, M .
IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :180-182
[8]   THE OXIDATION OF SHAPED SILICON SURFACES [J].
MARCUS, RB ;
SHENG, TT .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (06) :1278-1282
[9]  
MASSOUD MZ, 1985, J ELECTROCHEM SOC, V32, P2865
[10]  
Mori S, 1986, VLSI S, P71