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SIMPLIFIED MODEL FOR SUBPINCHOFF CONDUCTION IN DEPLETION-MODE IGFETS
被引:18
作者
:
HENDRICKSON, TE
论文数:
0
引用数:
0
h-index:
0
HENDRICKSON, TE
机构
:
来源
:
IEEE TRANSACTIONS ON ELECTRON DEVICES
|
1978年
/ 25卷
/ 04期
关键词
:
D O I
:
10.1109/T-ED.1978.19104
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:435 / 441
页数:7
相关论文
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[1]
IMAGING DEVICES USING CHARGE-COUPLED CONCEPT
[J].
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USN,RES LAB,WASHINGTON,DC 20375
BARBE, DF
.
PROCEEDINGS OF THE IEEE,
1975,
63
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:38
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[2]
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ED19
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[J].
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IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
TROUTMAN, RR
.
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1974,
SC 9
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[4]
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←
1
→
共 4 条
[1]
IMAGING DEVICES USING CHARGE-COUPLED CONCEPT
[J].
BARBE, DF
论文数:
0
引用数:
0
h-index:
0
机构:
USN,RES LAB,WASHINGTON,DC 20375
USN,RES LAB,WASHINGTON,DC 20375
BARBE, DF
.
PROCEEDINGS OF THE IEEE,
1975,
63
(01)
:38
-67
[2]
SUBTHRESHOLD DRAIN LEAKAGE CURRENTS IN MOS FIELD-EFFECT TRANSISTORS
[J].
GOSNEY, WM
论文数:
0
引用数:
0
h-index:
0
GOSNEY, WM
.
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1972,
ED19
(02)
:213
-&
[3]
SUBTHRESHOLD DESIGN CONSIDERATIONS FOR INSULATED GATE FIELD-EFFECT TRANSISTORS
[J].
TROUTMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
IBM CORP, SYST PROD DIV, ESSEX JUNCTION, VT 05452 USA
TROUTMAN, RR
.
IEEE JOURNAL OF SOLID-STATE CIRCUITS,
1974,
SC 9
(02)
:55
-60
[4]
TROUTMAN RR, 1973, IEEE T CIRCUIT THEOR, V20, P559
←
1
→