A NEW APPROACH TO ANALYTICALLY SOLVING THE TWO-DIMENSIONAL POISSON EQUATION AND ITS APPLICATION IN SHORT-CHANNEL MOSFET MODELING

被引：0
作者：
LIN, PS
WU, CY
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 09期
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：1947 / 1956
页数：10
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    TREDWELL, TJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 932 - 940
  • [12] HIGH-ACCURACY PHYSICAL MODELING OF SUBMICROMETER MOSFETS
    WILSON, CL
    ROITMAN, P
    BLUE, JL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (07) : 1246 - 1258
  • [13] AN ANALYTIC AND ACCURATE MODEL FOR THE THRESHOLD VOLTAGE OF SHORT CHANNEL MOSFETS IN VLSI
    WU, CY
    YANG, SY
    CHEN, HH
    TSENG, FC
    SHIH, CT
    [J]. SOLID-STATE ELECTRONICS, 1984, 27 (07) : 651 - 658
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