HIGH-SENSITIVITY MOS VARACTOR

被引：0
|
作者：
RAO, PRS
BHAT, KN
RAO, KR
机构：
[1] Indian Inst of Technology, Madras, India, Indian Inst of Technology, Madras, India
来源：
SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 11期
关键词：
D O I：
10.1016/0038-1101(86)90056-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
4
引用
收藏
页码：1137 / 1144
页数：8
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