AC Impedance Analysis of the Al/ZnO/p-Si/Al Schottky Diode: C-V Plots and Extraction of Parameters

被引：0

作者：

Benhaliliba, M. ^{[1
]}

Ocak, Y. S. ^{[2
]}

Mokhtari, H. ^{[1
]}

Kilicoglu, T. ^{[3
]}

机构：

[1] Oran Univ Sci & Technol USTO MB, Dept Mat Technol, Fac Phys, BP1505, Oran, Algeria

[2] Dicle Univ, Fac Educ, Dept Sci, TR-21280 Diyarbakir, Turkey

[3] Batman Univ, Dept Phys, Fac Sci, TR-72000 Batman, Turkey

来源：

JOURNAL OF NANO- AND ELECTRONIC PHYSICS | 2015年 / 7卷 / 02期

关键词：

Spray pyrolysis; ZnO / p-Si Schottky diode; C-V characteristics; Capacitance-Voltage; Interface density;

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this research, we report on the measurement of the capacitance-voltage (C-V) characteristics Al / ZnO / p-Si / Al Schottky diode at room temperature and in dark condition fabricated by spray pyrolysis process. C-V characteristics, within the range of frequencies 5 kHz-5 MHz, are investigated and microelectronic parameters are extracted. Donor density and diffusion potential vary with frequency from 15 to 28 1014 cm - 3, 0.21 to 0.45 V. Besides, the interface state density of Al /ZnO / pSi/Al Schottky is determined and found to be 1012 (eV.cm(2))(-1). Calculated at 1 MHz, the interfacial layer thickness and depletion layer width are of 760 angstrom and 0.28 m.

引用

页数：4