COORDINATION-COMPOUNDS OF ALUMINUM AS PRECURSORS TO ALUMINUM NITRIDE

被引:85
作者
SAULS, FC
INTERRANTE, LV
机构
[1] RENSSELAER POLYTECH INST,DEPT CHEM,TROY,NY 12180
[2] KINGS COLL,DEPT CHEM,WILKES BARRE,PA 18711
关键词
D O I
10.1016/0010-8545(93)80030-9
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Two different systems have been examined as potential sources of aluminum nitride, an important electronic and structural ceramic material. Cyclic organoaluminum amides obtained as intermediates in the thermolysis of trialkylaluminum: ammonia Lewis acid-base complexes have been used to obtain AlN powder and as precursors for the chemical vapor deposition of AlN films. The structures of two of these intermediates were determined by single-crystal XRD and the kinetics and thermodynamics of their formation and thermal decomposition reactions were also studied. The second system employs ethylenediamine as the Lewis base in combination with the R3Al (R = Me, Et) compounds. A 2:1 ratio of Et3Al with en yields a hydrocarbon-soluble, polymeric amide on thermolysis, which can be used to prepare AlN films by solution coating followed by pyrolysis in NH3. Lower proportions of R3Al to en, on thermolysis, lead to the formation of R(m)Al(en-2H)n cluster species that contain 5- and 6-coordinated Al atoms chelated and bridged by en-2H ligands. On further heating, these cluster species apparently go on to form cross-linked, insoluble, polymeric networks through condensation reactions involving the multiple N-H and R-Al groups on the periphery of the cluster molecules. The structures of two of these novel Al-en cluster compounds were determined by single-crystal XRD.
引用
收藏
页码:193 / 207
页数:15
相关论文
共 25 条
  • [1] IDENTIFICATION OF THE GAS-PHASE PRODUCTS WHICH OCCUR DURING THE DEPOSITION OF ALN USING THE ORGANOMETALLIC PRECURSOR - [(CH3)2ALNH2]3
    AMATO, CC
    HUDSON, JB
    INTERRANTE, LV
    [J]. APPLIED SURFACE SCIENCE, 1992, 54 : 18 - 24
  • [2] AMATO CC, 1991, MATER RES SOC SYMP P, V204, P135
  • [3] BAHR G, 1939, INORGANIC CHEM FIAT, V24, P155
  • [4] Duffy M. T., 1973, Journal of Electronic Materials, V2, P359, DOI 10.1007/BF02666163
  • [5] FATHIMULLA A, 1983, J APPL PHYS, V54, P4586, DOI 10.1063/1.332661
  • [6] LEWIS ACIDITY OF ALANES . INTERACTIONS OF TRIMETHYLALANE WITH AMINES ETHERS AND PHOSPHINES
    HENRICKS.CH
    DUFFY, D
    EYMAN, DP
    [J]. INORGANIC CHEMISTRY, 1968, 7 (06) : 1047 - &
  • [7] Interrante L. V., 1986, MATER RES SOC S P, V73, P359
  • [8] ORGANOMETALLIC PRECURSORS TO ALN - SYNTHESIS AND CRYSTAL-STRUCTURES OF [(CH3)2ALNH2]3 AND THE PLANAR SPECIES [(T-C4H9)2ALNH2]3
    INTERRANTE, LV
    SIGEL, GA
    GARBAUSKAS, M
    HEJNA, C
    SLACK, GA
    [J]. INORGANIC CHEMISTRY, 1989, 28 (02) : 252 - 257
  • [9] PREPARATION AND PROPERTIES OF ALUMINUM NITRIDE FILMS USING AN ORGANOMETALLIC PRECURSOR
    INTERRANTE, LV
    LEE, W
    MCCONNELL, M
    LEWIS, N
    HALL, E
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (02) : 472 - 478
  • [10] REACTIONS OF TRIS(TRIMETHYLSILYL)ALUMINUM AND AMMONIA - FORMATION, STRUCTURE, AND THERMAL-DECOMPOSITION OF [(ME3SI)2ALNH2]2
    JANIK, JF
    DUESLER, EN
    PAINE, RT
    [J]. INORGANIC CHEMISTRY, 1987, 26 (26) : 4341 - 4345