THE TEMPORAL HELICON-WAVE ECHO IN A PLASMA WITH STEEPENED DENSITY PROFILE

被引：0
作者：
FEDUTENKO, EA
LAPSHIN, VI
机构：
[1] Department of Physics and Technology, Kharkov State University, Kharkov 310077
来源：
JOURNAL OF PLASMA PHYSICS | 1992年 / 47卷
关键词：
D O I：
10.1017/S0022377800024326
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
The hydrodynamic echo on the surface helicon-type modes radiated to vacuum in a magnetized plasma with steepened density profile is investigated. It is shown that perturbations induced by an initial pulse at the plasma boundary are modulated by a later applied second pulse of different wavelength, to yield a non-vanishing echo signal, which can be radiated to vacuum. The angle of the radiation and the density of the energy flow of this signal are determined.
引用
收藏
页码：431 / 437
页数：7
相关论文
共 50 条
[21]   OBSERVATION OF EFFECT OF OPEN ORBITS ON HELICON-WAVE PROPAGATION [J].
GRIMES, CC ;
ADAMS, G ;
SCHMIDT, PH .
PHYSICAL REVIEW LETTERS, 1965, 15 (09) :409-&
[22]   Main parameters of a slot line for helicon-wave excitation [J].
S. A. Korneychuk ;
S. V. Konyushko .
Russian Physics Journal, 2011, 53 :1125-1130
[23]   Si oxynitridation with helicon-wave excited nitrogen plasma: Effects of plasma divergence and concentration on substrates [J].
Kimura, S ;
Ito, T ;
Tabakomori, M ;
Okamoto, Y ;
Ikoma, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (3B) :L316-L319
[24]   Si oxynitridation with Helicon-wave excited nitrogen plasma: effects of plasma divergence and concentration on substrates [J].
Science Univ of Tokyo, Chiba, Japan .
Jpn J Appl Phys Part 2 Letter, 3 B (L316-L319)
[25]   Preparation of aluminium-doped ZnO films by helicon-wave excited plasma sputtering [J].
Yamaki, Y ;
Yamaya, K ;
Araya, H ;
Nakanishi, H ;
Chichibu, S .
BLUE LASER AND LIGHT EMITTING DIODES II, 1998, :48-51
[26]   MAIN PARAMETERS OF A SLOT LINE FOR HELICON-WAVE EXCITATION [J].
Korneychuk, S. A. ;
Konyushko, S. V. .
RUSSIAN PHYSICS JOURNAL, 2011, 53 (11) :1125-1130
[27]   Oxynitridation of silicon using helicon-wave excited and inductively-coupled nitrogen plasma [J].
Okamoto, Y ;
Kimura, S ;
Ikoma, B .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (02) :805-812
[28]   Oxidation of GaAs using helicon-wave excited nitrogen-oxygen-argon plasma [J].
Wada, S ;
Kasahara, F ;
Hara, A ;
Ikoma, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1998, 37 (4B) :L427-L430
[29]   Using the Steepened Plasma Profile and Wave Breaking Threshold in Laser-Plasma Interaction [J].
Zobdeh, P. ;
Sadighi-Bonabi, R. ;
Afarideh, H. ;
Yazdani, E. ;
Nasirabad, R. Rezaei .
CONTRIBUTIONS TO PLASMA PHYSICS, 2008, 48 (08) :555-560
[30]   Development of a helicon-wave excited plasma facility with high magnetic field for plasma-wall interactions studies [J].
张桂炉 ;
黄天源 ;
金成刚 ;
吴雪梅 ;
诸葛兰剑 ;
吉瀚涛 .
Plasma Science and Technology, 2018, 20 (08) :116-122
12345