LATTICE SCATTERING AND EFFECTIVE MASS OF HOLES IN NATURAL DIAMOND

被引：38

作者：

REGGIANI, L ^{[1
]}

BOSI, S ^{[1
]}

CANALI, C ^{[1
]}

NAVA, F ^{[1
]}

机构：

[1] PN LEBEDEV PHYS INST,MOSCOW,USSR

来源：

SOLID STATE COMMUNICATIONS | 1979年 / 30卷 / 06期

关键词：

D O I：

10.1016/0038-1098(79)90645-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Drift mobility and high-field drift velocity of holes in natural diamond are investigated with the time-of-flight technique. A theoretical interpretation based on Monte Carlo simulation suggests possible values for the deformation potential parameters and effective masses. © 1979.

引用

页码：333 / 335

页数：3

共 13 条

[1] HALL COEFFICIENT AND MAGNETORESISTANCE IN SEMICONDUCTING DIAMOND [J].

BATE, RT ;

WILLARDSON, RK .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1959, 74 (477) :363-367

[2] ELECTRON DRIFT VELOCITY IN SILICON [J].

CANALI, C ;

JACOBONI, C ;

NAVA, F ;

OTTAVIANI, G ;

ALBERIGIQUARANTA, A .

PHYSICAL REVIEW B, 1975, 12 (06) :2265-2284

[3]

DEAN PJ, 1965, PHYS REV A, V140, P352

[4] NONPARABOLICITY AND INTRINSIC CARRIER CONCENTRATION IN SI AND GE [J].

GAGLIANI, G ;

REGGIANI, L .

NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA B-GENERAL PHYSICS RELATIVITY ASTRONOMY AND MATHEMATICAL PHYSICS AND METHODS, 1975, 30 (02) :207-216

[5] ENERGY BAND STRUCTURE IN P-TYPE GERMANIUM AND SILICON [J].

KANE, EO .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :82-99

[6]

Kittel C., 1966, INTRO SOLID STATE PH

[7]

KONOROVA EA, 1967, SOV PHYS SEMICOND+, V1, P299

[8] VALENCE-BAND PARAMETERS IN CUBIC SEMICONDUCTORS [J].

LAWAETZ, P .

PHYSICAL REVIEW B, 1971, 4 (10) :3460-&

[9]

RAUCH CJ, 1962, 6TH P INT C PHYS SEM, P276

[10] HOLE DRIFT VELOCITY IN GERMANIUM [J].

REGGIANI, L ;

CANALI, C ;

NAVA, F ;

OTTAVIANI, G .

PHYSICAL REVIEW B, 1977, 16 (06) :2781-2791

← 1 2 →