INFLUENCE OF SURFACE BAND BENDING ON INCORPORATION OF IMPURITIES IN SEMICONDUCTORS - TE IN GAAS

被引：52
作者：
CASEY, HC
PANISH, MB
WOLFSTIRN, KB
机构：
来源：
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1971年 / 32卷 / 03期
关键词：
D O I：
10.1016/0022-3697(71)90006-0
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
引用
收藏
页码：571 / +
页数：1
相关论文
共 36 条
[1]   DETECTION OF SELENIUM CLUSTERING IN GAAS BY TRANSMISSION ELECTRON MICROSCOPY [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ ;
TIETJEN, JJ .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (02) :760-&
[2]   DEPENDENCE OF SCHOTTKY BARRIER HEIGHT ON DONOR CONCENTRATION [J].
ARCHER, RJ ;
YEP, TO .
JOURNAL OF APPLIED PHYSICS, 1970, 41 (01) :303-&
[3]   HIGH-TEMPERATURE HALL COEFFICIENT IN GAS [J].
AUKERMAN, LW ;
WILLARDSON, RK .
JOURNAL OF APPLIED PHYSICS, 1960, 31 (05) :939-940
[4]   IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN N-GALLIUM ARSENIDE [J].
BASINSKI, J ;
OLIVIER, R .
CANADIAN JOURNAL OF PHYSICS, 1967, 45 (01) :119-&
[5]  
BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS, P77
[6]  
CASEY HW, UNPUBLISHED
[7]   BAND STRUCTURE AND ELECTRON TRANSPORT OF GAAS [J].
EHRENREICH, H .
PHYSICAL REVIEW, 1960, 120 (06) :1951-1963
[8]  
HWANG CJ, TO BE PUBLISHED
[9]  
JORDAN AS, TO BE PUBLISHED
[10]   Measurement on gallium- and indium-compounds X Gallium and Indium chalcogenides [J].
Klemm, W ;
von Vogel, HU .
ZEITSCHRIFT FUR ANORGANISCHE UND ALLGEMEINE CHEMIE, 1934, 219 (01) :45-64
1234