ANNEALING OF DEFECTS IN QUENCHED N-TYPE SILICON IRRADIATED WITH FAST ELECTRONS

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198

[2] QUENCHED-IN LEVELS IN P-TYPE SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 541 - &

[3] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 171 - 174

[4] KONOROVA LF, 1972, FIZ TVERD TELA+, V14, P1852

[5] KOVAL YP, 1971, FIZ TEKH POLUPROV, V5, P2352

[6] KOZLOV IP, 1972, FIZ TEKH POLUPROV, V6, P2048

[7] LAPPO MT, 1973, THESIS MINSK

[8] LESKOSCHEK W, 1975, ACTA PHYS AUSTRIACA, V41, P89

[9] MORDKOVICH VN, 1974, FIZ TEKH POLUPROV, V8, P210

[10] PANOV VI, 1972, FIZ TEKH POLUPROV, V6, P673

[1] PARAMAGNETIC RESONANCE IN ELECTRON IRRADIATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1195 - 1198

[2] QUENCHED-IN LEVELS IN P-TYPE SILICON [J]. PHYSICA STATUS SOLIDI, 1967, 22 (02): : 541 - &

[3] ROLE OF DEFECT CHARGE STATE IN STABILITY OF POINT-DEFECTS IN SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 16 (01) : 171 - 174

[4] KONOROVA LF, 1972, FIZ TVERD TELA+, V14, P1852

[5] KOVAL YP, 1971, FIZ TEKH POLUPROV, V5, P2352

[6] KOZLOV IP, 1972, FIZ TEKH POLUPROV, V6, P2048

[7] LAPPO MT, 1973, THESIS MINSK

[8] LESKOSCHEK W, 1975, ACTA PHYS AUSTRIACA, V41, P89

[9] MORDKOVICH VN, 1974, FIZ TEKH POLUPROV, V8, P210

[10] PANOV VI, 1972, FIZ TEKH POLUPROV, V6, P673