SILICIDE DOPING TECHNOLOGY IN FORMATION OF TISI2/N+P SHALLOW JUNCTION BY SALICIDE PROCESS

被引：7
|
作者：
YANG, JR [1 ]
LUE, JT [1 ]
机构：
[1] NATL TSING HUA UNIV,DEPT PHYS,HSINCHU 300,TAIWAN
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期
关键词：
D O I：
10.1063/1.343037
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1039 / 1043
页数：5
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