SEMICONDUCTOR - SUPERCONDUCTOR HYBRID ELECTRONICS

被引:22
作者
VANDUZER, T
KUMAR, S
机构
[1] UNIV CALIF BERKELEY, ELECTR RES LAB, BERKELEY, CA 94720 USA
[2] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB, BERKELEY, CA 94720 USA
关键词
SEMICONDUCTORS; SUPERCONDUCTORS; TRANSISTORS;
D O I
10.1016/0011-2275(90)90201-M
中图分类号
O414.1 [热力学];
学科分类号
摘要
This paper examines the feasibility and potential for applications of intimately combining semiconductor and superconductor devices at circuit and system levels. The focus is mainly on the temperature range 27 - 77 K. One of the main issues is the heat produced by the semiconductor devices, since the superconductor devices produce much less heat and are sensitive to temperature changes. It is shown that Josephson junctions made with high temperature superconductors can be placed very close to transistors on a properly heat-sunk chip. A second important issue is interfacing the low voltages of superconducting devices to the much higher voltages needed for transistors; an existing technique is discussed in the context of high temperature superconductors. Only well developed semiconductor technologies have been considered; although there is some possibility of making low voltage transistors, this is not explored here. The paper concludes with an analysis of the various applications that can be realized, depending on the type of device available in high temperature superconductor technology: passive patterned films, non-hysteretic Josephson devices or Josephson tunnel junctions.
引用
收藏
页码:1014 / 1023
页数:10
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