INVESTIGATION OF THE INTERNAL PHOTO-ELECTRIC EMISSION AND RESIDUAL PHOTO-ELECTRIC EFFECTS IN THE SI-SIO2-SI3N4 SYSTEM

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作者
ZUEV, VA
POPOV, VG
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SOVIET PHYSICS SEMICONDUCTORS-USSR | 1978年 / 12卷 / 11期
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O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:1316 / 1319
页数:4
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[1]   PHOTOCONDUCTIVITY OF INDIUM-ANTIMONIDE WITH DIFFERENT SURFACE TREATMENTS [J].
CHAIKIN, VI ;
GUGA, KU ;
MALYUTENKO, VK ;
SACHENKO, AV .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (01) :311-316
[2]  
DMITRUK NL, 1975, SOV PHYS SEMICOND+, V9, P1466
[3]  
GAVRILENKO VI, 1976, SOV PHYS SEMICOND+, V10, P640
[4]  
GORODETS.SM, 1974, SOV PHYS SEMICOND+, V7, P853
[5]   THEORY OF PHOTOELECTRIC EMISSION FROM SEMICONDUCTORS [J].
KANE, EO .
PHYSICAL REVIEW, 1962, 127 (01) :131-&
[6]   HYSTERESIS AND MEMORY PROPERTIES OF SILICON-SILICON NITRIDE SYSTEM [J].
KENDALL, EJM .
SOLID-STATE ELECTRONICS, 1971, 14 (09) :791-&
[7]  
KRAVCHENKO AB, 1974, SOV PHYS SEMICOND+, V8, P522
[8]   SOLID-TO-SOLID EMISSION AND BAND-TO-BAND TRANSITIONS [J].
KREUTZ, EW .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1975, 29 (01) :195-205
[9]  
LITOVCHE.VG, 1965, FIZ TVERD TELA+, V7, P449