STRUCTURAL-CHANGES IN AMORPHOUS ARSENIC TRISELENIDE BELOW THE GLASS-TRANSITION TEMPERATURE

被引:0
作者
NAITO, H [1 ]
AMII, H [1 ]
OKUDA, M [1 ]
MATSUSHITA, T [1 ]
机构
[1] OSAKA SANGYO UNIV,DEPT ELECTR,DAITO,OSAKA 574,JAPAN
关键词
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A structural change below the glass-transition temperature in a-As2Se3 has been probed with the time-of-flight and dielectric measurements. A possible origin of this change is discussed.
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页码:1239 / 1242
页数:4
相关论文
共 18 条
[1]   BEHAVIOR OF THE DRIFT MOBILITY IN THE GLASS-TRANSITION REGION OF SOME HOLE-TRANSPORTING AMORPHOUS ORGANIC FILMS [J].
ABKOWITZ, M ;
STOLKA, M ;
MORGAN, M .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (05) :3453-3457
[2]   PHOTOELECTRONIC BEHAVIOR OF A-SE AND SOME A-SE - AS ALLOYS IN THEIR GLASS-TRANSITION REGIONS [J].
ABKOWITZ, M ;
PAI, DM .
PHYSICAL REVIEW B, 1978, 18 (04) :1741-1750
[3]  
BRUGGEMANN R, 1990, PHILOS MAG B, V62, P29
[4]   OPTO-ELECTRONIC PROPERTIES OF MERCURIC IODIDE [J].
BUBE, RH .
PHYSICAL REVIEW, 1957, 106 (04) :703-717
[5]   HOLE TRANSPORT IN VAPOUR-DEPOSITED AS2S3 [J].
BURMAN, M ;
HIRSCH, J ;
RAMDEEN, T .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (02) :117-127
[6]   TEMPERATURE-DEPENDENCE OF THE STRUCTURE FACTOR OF AS2SE3 GLASS UP TO THE GLASS-TRANSITION [J].
BUSSE, LE ;
NAGEL, SR .
PHYSICAL REVIEW LETTERS, 1981, 47 (25) :1848-1851
[7]   OPTICAL-ABSORPTION TAILS AND THE STRUCTURE OF CHALCOGENIDE GLASSES [J].
IHM, J .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (24) :4741-4751
[8]   ANOMALOUS TRANSPORT PHENOMENA OF PHOTO-ELECTRONS IN FERROMAGNETIC SEMICONDUCTOR EUO [J].
KAJITA, K ;
MASUMI, T ;
REED, TB .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (06) :1892-1905
[9]   THERMAL, MECHANICAL AND ELECTRICAL RELAXATION PHENOMENA IN A-SE FILMS [J].
KASAP, SO ;
POLISCHUK, B ;
AIYAH, V ;
YANNACOPOULOS, S .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 :49-51
[10]  
McCrum N.G., 1967, ANELASTIC DIELECTRIC