ELECTRONIC PROPERTIES OF DIATOMIC TWO-DIMENSIONAL HONEYCOMB SYSTEMS. AN AB INITIO STUDY

被引：0

作者：

Rojas-Cuervo, Angela M. ^{[1
]}

Fonseca-Romero, Karen M. ^{[1
]}

Rey-Gonzalez, Rafael R. ^{[1
]}

机构：

[1] Univ Nacl Colombia, Fac Ciencias, Dept Fis, Carrera 30 Calle 45-03, Bogota 111321, Colombia

来源：

MOMENTO-REVISTA DE FISICA | 2015年 / 50期

关键词：

Hexagonal monolayers; Electronic properties; DFT; DOS;

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The novel properties of graphene have motivated the search for materials with similar characteristics. In this work, we study the chemical stability and the band structures of GaAs and GaN hexagonal monolayers, using a first principles formalism. Results obtained with SIESTA code, as a DFT implementation, show GaAs (GaN) is an indirect (a direct) bandgap semiconductor.

引用

页码：1 / 9

页数：9

共 25 条

[1] [Anonymous], 2005, NATURE, V438, P197
[2] [Anonymous], 2014, CODE SIESTA IS USED
[3] [Anonymous], 1999, IND FIELD MOTOROLA 1
[4] Ashcroft N. W., 1976, SOLID STATA PHYS
[5] Barrera C. P. P., 2010, THESIS
[6] Davies JH., 1998, PHYS LOW DIMENSIONAL
[7] Experimental Evidence for Epitaxial Silicene on Diboride Thin Films
Fleurence, Antoine
Friedlein, Rainer
Ozaki, Taisuke
Kawai, Hiroyuki
Wang, Ying
Yamada-Takamura, Yukiko
[J]. PHYSICAL REVIEW LETTERS, 2012, 108 (24)
[8] Garcia A., 2014, ATOM USER MANUAL
[9] The rise of graphene
Geim, A. K.
Novoselov, K. S.
[J]. NATURE MATERIALS, 2007, 6 (03) : 183 - 191
[10] Kittel C., 1996, INTRO SOLID STATE PH

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