LOW-PRESSURE DIAMOND SYNTHESIS FOR ELECTRONIC APPLICATIONS

被引：60

作者：

RAVI, KV

机构：

[1] Lockheed Missiles, Space Company, Research and Development Division, Palo Alto, CA 94304-1191

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1993年 / 19卷 / 03期

关键词：

D O I：

10.1016/0921-5107(93)90190-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The status of the science and technology of the synthesis of diamond films and crystals at low pressures utilizing various activation means is reviewed. Passive and active electronic applications of diamond are discussed. Approaches for the growth of diamond single crystals for electronic applications are reviewed with an analysis of the structural and electrical characteristics of low-pressure synthesized films and crystals. Concepts being developed for processing diamond involving doping, the formation of barriers and contacts are discussed and an exploration of the current status in the fabrication of a number of devices including diodes, transistors and vacuum microelectronic devices is included.

引用

页码：203 / 227

页数：25

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