ELECTRON LOCALIZATION IN PB1-XSNXTE(IN) IN HIGH MAGNETIC-FIELD

被引：3
|
作者：
KHOKHLOV, DR
IVANCHIK, II
DEVISSER, A
NIKORICH, AV
机构：
[1] UNIV AMSTERDAM,VANDERWAALS ZEEMAN LAB,1018 XE AMSTERDAM,NETHERLANDS
[2] ACAD SCI MOSSR,INST APPL PHYS,KISHINEV,MOLDAVIA,USSR
来源：
SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 10期
关键词：
D O I：
10.1016/0038-1098(92)90159-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We report on the high-field (H < 400 kOe) magnetoresistance of initially dielectric Pb0.75Sn0.25Te(In). The data taken at (1.4 - 4.2) K show a magnetoresistance increase in time (localization) for a relatively low concentration of nonequilibrium electrons. The characteristic time for localization T depends exponentially on H and linearly on T. The possible origins of the effect are discussed.
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页码：759 / 762
页数：4
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