LOW-TEMPERATURE ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF POLYCRYSTALLINE TIN NITRIDE THIN-FILMS

被引:47
作者
GORDON, RG [1 ]
HOFFMAN, DM [1 ]
RIAZ, U [1 ]
机构
[1] UNIV HOUSTON,DEPT CHEM,HOUSTON,TX 77204
关键词
D O I
10.1021/cm00019a016
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The atmospheric pressure chemical vapor deposition of tin nitride thin films from tetrakis(dimethylamido)tin(IV) and ammonia precursors is reported. The films were characterized by transmission electron microscopy, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and forward recoil spectrometry. The films were deposited on soda lime, borosilicate, and quartz glass and silicon substrates at substrate temperatures of 200-400-degrees-C with growth rates up to 1000 angstrom/min. The films were smooth, adherent, and chemically inert. Rutherford backscattering analysis showed that the N/Sn ratio was 1.45-1.50. The ratio was independent of deposition temperature. The hydrogen concentration, measured by forward recoil spectrometry, ranged from 18 atom % at 200-degrees-C to 15 atom % at 400-degrees-C. Transmission electron microscopy revealed that the films deposited at 200-degrees-C were amorphous whereas films deposited at 300 and 400-degrees-C were polycrystalline. The films were conductive with resistivities in the range of (2-9) X 10(-3) OMEGA-cm. A bandgap of 1.94-2.25 eV was estimated from transmission spectra.
引用
收藏
页码:68 / 71
页数:4
相关论文
共 22 条
[1]  
BRIGGS D, 1983, PRACTICAL SURFACE AN, P161
[2]  
Chu W.-K., 1978, BACKSCATTERING SPECT
[4]  
DUBOIS LH, 1991, MATER RES SOC S P, V204, P95
[5]  
FIX R, IN PRESS CHEM MATER
[6]  
FIX R, 1991, THESIS HARVARD U
[7]   SOLUTION-PHASE REACTIVITY AS A GUIDE TO THE LOW-TEMPERATURE CHEMICAL VAPOR-DEPOSITION OF EARLY-TRANSITION-METAL NITRIDE THIN-FILMS [J].
FIX, RM ;
GORDON, RG ;
HOFFMAN, DM .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1990, 112 (21) :7833-7835
[8]  
FIX RM, 1990, MATER RES SOC SYMP P, V168, P357
[9]   SILICON DIMETHYLAMIDO COMPLEXES AND AMMONIA AS PRECURSORS FOR THE ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE THIN-FILMS [J].
GORDON, RG ;
HOFFMAN, DM ;
RIAZ, U .
CHEMISTRY OF MATERIALS, 1990, 2 (05) :480-482
[10]   ATMOSPHERIC-PRESSURE CHEMICAL VAPOR-DEPOSITION OF ALUMINUM NITRIDE THIN-FILMS AT 200-250-DEGREES C [J].
GORDON, RG ;
HOFFMAN, DM ;
RIAZ, U .
JOURNAL OF MATERIALS RESEARCH, 1991, 6 (01) :5-7