DEPENDENCE OF COUNTING CHARACTERISTICS OF SECONDARY-ELECTRON MULTIPLIERS ON RESIDUAL-GAS PRESSURE

被引：0
作者：
BARKOVSKII, VN
VYDRIK, AA
KOROBKOV, IN
MIKUTSKII, VG
机构：
来源：
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES | 1979年 / 22卷 / 05期
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：1379 / 1381
页数：3
相关论文
共 50 条
[31]   CHANGES OF RESIDUAL-GAS SPECIES IN A VACUUM CHAMBER DURING ELECTRON-BOMBARDMENT [J].
KOBAYASHI, S ;
SUZUKI, K ;
KATSUBE, T .
APPLIED SURFACE SCIENCE, 1988, 33-4 :370-378
[32]   ELECTRON SPACE-CHARGE EFFECTS IN ION SOURCES FOR RESIDUAL-GAS ANALYSIS [J].
COWEN, MC ;
ALLISON, W ;
BATEY, JH .
MEASUREMENT SCIENCE AND TECHNOLOGY, 1993, 4 (01) :72-78
[33]   SIMPLE METHOD FOR RESIDUAL-GAS MONITORING IN SECONDARY-EMISSION MASS-SPECTROMETRY [J].
TANTSYREV, GD ;
SOKOLAN, SV .
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1989, 32 (04) :930-932
[34]   Nonlinear focusing by residual-gas ionization in long-pulse electron linacs [J].
Carlsten, BE .
PHYSICAL REVIEW E, 2001, 64 (04) :6-465016
[35]   INTERFACING AN APPLE TO INSTRUMENTATION FOR RESIDUAL-GAS ANALYSIS AND HIGH-PRESSURE DTA [J].
OTTEN, GA ;
LONGO, JM ;
HUANG, WL .
ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1985, 189 (APR-) :135-INDE
[36]   INFLUENCE OF RESIDUAL-GAS PRESSURE ON OPTICAL-PROPERTIES OF THIN-FILMS [J].
PANASENKO, BV ;
NESMELOV, EA ;
TAGIROV, RB .
SOVIET JOURNAL OF OPTICAL TECHNOLOGY, 1980, 47 (01) :25-27
[37]   HIGH-SENSITIVITY QUASISIMULTANEOUS SECONDARY NEUTRAL, SECONDARY ION, AND RESIDUAL-GAS MASS-SPECTROMETRY BY A NEW ELECTRON-IMPACT POSTIONIZER [J].
LIPINSKY, D ;
JEDE, R ;
TUMPNER, J ;
GANSCHOW, O ;
BENNINGHOVEN, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (05) :2035-2036
[38]   USE OF RESIDUAL-GAS ANALYSIS IN LOW-PRESSURE SEMICONDUCTOR PROCESS REACTORS [J].
REATH, M ;
BRANNEN, J ;
BAKEMAN, P ;
LEBEL, R .
JOURNAL OF THE IES, 1994, 37 (02) :57-60
[39]   Dependence of Secondary-electron Yield on Aspect Ratio of Several Trench Patterns [J].
Bizen, Daisuke ;
Sohda, Yasunari ;
Kazumi, Hideyuki .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXVIII, 2014, 9050
[40]   TEMPERATURE-DEPENDENCE OF SECONDARY-ELECTRON CONDUCTIVITY IN POROUS KCL LAYERS [J].
BORMOSOVA, TV ;
STUCHINSKY, GB ;
YANYUSHKIN, EI .
RADIOTEKHNIKA I ELEKTRONIKA, 1979, 24 (07) :1467-1468
12345