DETERMINATION OF THE PARAMETERS OF A DEEP LEVEL IN THE SURFACE-LAYER OF A SEMICONDUCTOR OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURE BY THE ADMITTANCE METHOD

被引：0
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作者：
SURIS, RA
FEDOROV, VN
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1979年 / 13卷 / 06期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：629 / 634
页数：6
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