共 50 条
- [1] DETERMINATION OF THE PARAMETERS OF A DEEP LEVEL IN THE SURFACE LAYER OF A SEMICONDUCTOR OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURE BY THE ADMITTANCE METHOD.Soviet physics. Semiconductors, 1979, 13 (06): : 629 - 634Suris, R.A.Fedorov, V.N.
- [2] Determination of the density of surface states at the semiconductor-insulator interface in a metal-insulator-semiconductor structureSemiconductors, 2011, 45 : 174 - 178G. GulyamovN. U. Sharibaev
- [3] Determination of the Density of Surface States at the Semiconductor-Insulator Interface in a Metal-Insulator-Semiconductor StructureSEMICONDUCTORS, 2011, 45 (02) : 174 - 178Gulyamov, G.Sharibaev, N. U.
- [4] Studies of GaAs metal-insulator-semiconductor structures by the admittance spectroscopy methodAPPLIED SURFACE SCIENCE, 2004, 235 (03) : 389 - 394Kochowski, SNitsch, KPaszkiewicz, BPaszkiewicz, RSzydlowski, M
- [5] METHOD OF DEEP LEVEL PROFILING IN THE SEMICONDUCTOR OF A METAL-INSULATOR SEMICONDUCTOR STRUCTURESOVIET MICROELECTRONICS, 1989, 18 (06): : 295 - 302LYSENKO, VSNAZAROV, ANRUDENKO, TE
- [6] Deep-level spectroscopy in metal-insulator-semiconductor structuresJOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (06)Kurtz, A.Munoz, E.Chauveau, J. M.Hierro, A.
- [7] Method of metal-insulator-semiconductor structure interface analysisSURFACE AND INTERFACE ANALYSIS, 1999, 28 (01) : 142 - 145Bondarenko, GGAndreev, VVStolyarov, AA
- [8] DETERMINATION OF THE PARAMETERS OF SURFACE STATES BY THE METHOD OF THERMALLY STIMULATED DISCHARGE OF A METAL-INSULATOR-SEMICONDUCTOR CAPACITOR.1982, V 16 (N 5): : 509 - 512LUSHNIKOV, N.A.ZHDAN, A.G.
- [9] PHOTOCAPACITANCE OF A METAL-INSULATOR-SEMICONDUCTOR STRUCTURESOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 832 - 833LEBEDEV, AASOBOLEV, NAECKE, W
- [10] DETERMINATION OF THE SURFACE MOBILITY IN A CHARGE-COUPLED METAL-INSULATOR-SEMICONDUCTOR STRUCTURE.Soviet physics. Semiconductors, 1986, 20 (01): : 28 - 30Sysoev, B.I.Antyushin, V.F.Strygin, V.D.