ELECTRICAL-PROPERTIES OF CUGATE2 EPITAXIAL LAYERS

被引：56

作者：

NEUMANN, H ^{[1
]}

PETERS, D ^{[1
]}

SCHUMANN, B ^{[1
]}

KUHN, G ^{[1
]}

机构：

[1] KARL MARX UNIV,FACHBEREICH KRISTALLOG,SEKT CHEM,DDR-701 LEIPZIG,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1979年 / 52卷 / 02期

关键词：

D O I：

10.1002/pssa.2210520224

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of epitaxial layers of CuGaTe2 on GaAs substrates are investigated as a function of the growth temperature. The layers are always p‐type conducting and show an increase of the hole concentration with rising growth temperature. Two acceptor states with ionization energies of (140 ± 5) meV and about 450 meV are found. The results are discussed with regard to some general trends found in the Cu‐III‐VI2 compounds. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA

引用

页码：559 / 564

页数：6

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