AN ELECTRON-MIRROR INFRARED IMAGE CONVERTER USING VITREOUS SELENIUM-BISMUTH PHOTOCONDUCTING LAYERS

被引：20

作者：

BATES, CW

ENGLAND, L

机构：

[1] Department of Physics, Imperial College, London

来源：

APPLIED PHYSICS LETTERS | 1969年 / 14卷 / 12期

关键词：

D O I：

10.1063/1.1652701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An electron-mirror infrared image converter using a 4-μ-thick layer of 95 at. % of Se and 5 at. % of Bi as both mirror and target has been constructed. Preliminary measurements indicate that the device has a sensitivity of 0.13 μA per μW per cm2 at a wavelength of 9600 Å. © 1969 The American Institute of Physics.

引用

页码：390 / &