共 50 条
- [21] ULTRAHIGH-VACUUM CVD EPITAXY OF SILICON AND GEXSI1-X JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1991, 43 (10): : 32 - 37
- [22] Molecular-beam epitaxy of silicon by sublimation Physics, chemistry and mechanics of surfaces, 1995, 10 (10-11): : 1224 - 1232
- [23] SILICON MOLECULAR-BEAM EPITAXY - FOREWORD JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4B): : R8 - R8
- [24] PARTICULATES IN SILICON MOLECULAR-BEAM EPITAXY JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (03): : 751 - 751
- [25] PRODUCTION SILICON MOLECULAR-BEAM EPITAXY APPARATUS FOR 4-IN-DIAM WAFERS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04): : 975 - 980
- [29] PHOTOLUMINESCENCE STUDY OF SI1-XGEX/SI HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY AND ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (03): : 1089 - 1096
- [30] THE GROWTH OF THIN-FILMS WITH HIGH THICKNESS UNIFORMITY USING ULTRAHIGH-VACUUM MOLECULAR-BEAM DEPOSITION JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (06): : 3934 - 3937