SIMPLE PRESSURIZED CHAMBERS FOR LIQUID ENCAPSULATED CZOCHRALSKI CRYSTAL-GROWTH

被引：12

作者：

BUEHLER, E

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 43卷 / 05期

关键词：

D O I：

10.1016/0022-0248(78)90045-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：584 / 588

页数：5

共 12 条

[1]

ANTYPAS GA, 1977, 6TH P INT S GAAS REL, P55

[2] GROWTH OF INP CRYSTALS FROM MELT [J].

BACHMANN, KJ ;

BUEHLER, E .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (01) :279-302

[3] CURRENT STATUS OF PREPARATION OF SINGLE-CRYSTALS, BICRYSTALS, AND EPITAXIAL LAYERS OF P-INP AND OF POLYCRYSTALLINE P-INP FILMS FOR PHOTOVOLTAIC APPLICATIONS [J].

BACHMANN, KJ ;

BUEHLER, E ;

MILLER, BI ;

MCFEE, JH ;

THIEL, FA .

JOURNAL OF CRYSTAL GROWTH, 1977, 39 (01) :137-150

[4] LIQUID ENCAPSULATED CZOCHRALSKI PULLING OF INP CRYSTALS [J].

BACHMANN, KJ ;

BUEHLER, E ;

SHAY, JL ;

STRNAD, AR .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (02) :389-406

[5]

BACJMANN KJ, 1975, J ELECTRON MATER, V4, P749

[6]

HENRY RL, 1976, 6TH P INT S GAAS REL, P28

[7]

Mullin J. B., 1968, Journal of Crystal Growth, V3-4Spe, P281, DOI 10.1016/0022-0248(68)90154-1

[8]

Mullin J. B., 1972, Journal of Crystal Growth, V13-14, P640, DOI 10.1016/0022-0248(72)90534-9

[9]

MULLIN JB, 1970, 3RD P INT S GALL ARS, P41

[10]

MULLIN JB, 1972, 4TH P INT S GAAS REL, P118

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