共 50 条
- [2] OXYGEN PRECIPITATION AND BULK MICRODEFECTS INDUCED BY THE PRETEPITAXIAL AND POSTTEPITAXIAL ANNEALING IN N/N+ (100) SILICON-WAFERSJOURNAL OF APPLIED PHYSICS, 1987, 62 (12) : 4897 - 4902WIJARANAKULA, WMATLOCK, JHMOLLENKOPF, H
- [3] EFFECT OF POSTANNEALING ON THE OXYGEN PRECIPITATION AND INTERNAL GETTERING PROCESS IN N/N+ (100) EPITAXIAL WAFERSJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) : 3113 - 3119WIJARANAKULA, WMATLOCK, JHMOLLENKOPF, H
- [5] OXYGEN PRECIPITATION IN ANTIMONY-DOPED SILICON-WAFERSAPPLIED PHYSICS LETTERS, 1986, 48 (10) : 665 - 667DARAGONA, FSFEJES, PL
- [6] Evaluation of effective recombination velocity related to the potential barrier in n/n+ silicon epitaxial wafersJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (3A): : 1214 - 1219Takahashi, HMaekawa, T
- [7] INCREASED OXYGEN PRECIPITATION IN CZ SILICON-WAFERS COVERED BY POLYSILICONJOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (05) : 763 - 778ARST, MCDEGROOT, JG
- [8] ELECTROCHEMICALLY THINNED N/N+ EPITAXIAL SILICONJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (08) : C261 - +MEEK, RL
- [9] Enhanced internal gettering in n/n+ epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrateJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2014, 25 (08) : 3486 - 3491Dong, PengLiang, XingboTian, DaxiZhao, JianjiangGao, ChaoMa, XiangyangYang, Deren
- [10] Enhanced internal gettering in n/n+ epitaxial silicon wafer: coaction of nitrogen impurity and vacancy on oxygen precipitation in substrateJournal of Materials Science: Materials in Electronics, 2014, 25 : 3486 - 3491Peng DongXingbo LiangDaxi TianJianjiang ZhaoChao GaoXiangyang MaDeren Yang