MOLECULAR-BEAM EPITAXIAL-GROWTH OF GRADED BAND-GAP QUATERNARY GAXALYIN1-X-YAS MULTILAYER HETEROSTRUCTURES ON INP - APPLICATION TO A NOVEL AVALANCHE PHOTODIODE WITH AN ULTRAHIGH IONIZATION RATIO

被引：14

作者：

ALAVI, K ^{[1
]}

CHO, AY ^{[1
]}

CAPASSO, F ^{[1
]}

ALLAM, J ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期

关键词：

D O I：

10.1116/1.583755

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：802 / 807

页数：6

共 23 条

[1] OPTICALLY PUMPED 1.55-MU-M DOUBLE HETEROSTRUCTURE GAXALYIN1-X-YAS/ALUIN1-UAS LASERS GROWN BY MOLECULAR-BEAM EPITAXY
ALAVI, K
TEMKIN, H
WAGNER, WR
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 254 - 256
[2] GA0.47IN0.53AS/AL0.48IN0.52AS MULTIQUANTUM-WELL LEDS EMITTING AT 1.6-MU-M
ALAVI, K
PEARSALL, TP
FORREST, SR
CHO, AY
[J]. ELECTRONICS LETTERS, 1983, 19 (06) : 227 - 229
[3] ALAVI K, 1984, 3RD INT C MOL BEAM E
[4] ALLAM J, 1986, 13TH INT S GAAS REL
[5] STAIRCASE SOLID-STATE PHOTOMULTIPLIERS AND AVALANCHE PHOTO-DIODES WITH ENHANCED IONIZATION RATES RATIO
CAPASSO, F
TSANG, WT
WILLIAMS, GF
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (04) : 381 - 390
[6] NEW AVALANCHE MULTIPLICATION PHENOMENON IN QUANTAM WILL SUPERLATTICES - EVIDENCE OF IMPACT IONIZATION ACROSS THE BAND-EDGE DISCONTINUITY
CAPASSO, F
ALLAM, J
CHO, AY
MOHAMMED, K
MALIK, RJ
HUTCHINSON, AL
SIVCO, D
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1294 - 1296
[7] Capasso F., 1983, International Electron Devices Meeting 1983. Technical Digest, P468
[8] NEW LONG WAVELENGTH AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTO-DIODE GROWN BY MOLECULAR-BEAM EPITAXY
CAPASSO, F
ALAVI, K
CHO, AY
FOY, PW
BETHEA, CG
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (11) : 1040 - 1042
[9] NEW LOW DARK CURRENT, HIGH-SPEED AL0.48IN0.52AS/GA0.47IN0.53AS AVALANCHE PHOTODIODE BY MOLECULAR-BEAM EPITAXY FOR LONG WAVELENGTH FIBER OPTIC COMMUNICATION-SYSTEMS
CAPASSO, F
KASPER, B
ALAVI, K
CHO, AY
PARSEY, JM
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (11) : 1027 - 1029
[10] CAPASSO F, 1987, IEEE ELECTRON DEVICE, V8, P4

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