DETERMINATION OF COMPENSATION RATIO IN SILICON BY AN ELECTRON SPIN RESONANCE METHOD

被引:3
作者
IGO, T
机构
关键词
D O I
10.1143/JJAP.4.523
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:523 / &
相关论文
共 15 条
[11]   THE HALL COEFFICIENT OF SEMICONDUCTORS [J].
JONES, H .
PHYSICAL REVIEW, 1951, 81 (01) :149-149
[12]   IONIZED-IMPURITY SCATTERING MOBILITY OF ELECTRONS IN SILICON [J].
LONG, D ;
MYERS, J .
PHYSICAL REVIEW, 1959, 115 (05) :1107-1118
[13]   DRIFT AND CONDUCTIVITY MOBILITY IN SILICON [J].
LUDWIG, GW ;
WATTERS, RL .
PHYSICAL REVIEW, 1956, 101 (06) :1699-1701
[14]  
MARTON L, 1955, ADV ELECTRON, V7, P85
[15]   TEMPERATURE DEPENDENCE OF HALL MOBILITY AND MUH-MUD FOR SI [J].
MESSIER, J ;
MERLOFLORES, J .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) :1539-&