EFFECT OF DOUBLE REFLECTION ON THE FORWARD CURRENT-VOLTAGE CHARACTERISTICS OF A SILICON P+-S-N+ EPITAXIAL DIODE

被引：0
作者：
RAMANAN, S
KAKATI, D
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来源：
SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 02期
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D O I：
10.1016/0038-1101(82)90048-X
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：155 / 159
页数：5
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