OPTICAL CHARACTERIZATION OF PURE ZNSE FILMS GROWN ON GAAS

被引：82

作者：

KIM, YD

COOPER, SL

KLEIN, MV

JONKER, BT

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 19期

关键词：

D O I：

10.1063/1.109373

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first spectroscopic ellipsometry study of the E0, E0+DELTA0, E1, and E1+DELTA1 critical points in high-quality ZnSe films. These data seem to be the best identification of E1 and E1+DELTA1 peaks to date using ellipsometry. We also describe a chemical etching procedure which was successfully used to remove the natural surface oxide overlayer on the ZnSe films. X-ray photoelectron spectroscopy data after NH4OH treatment shows the disappearance of oxygen and oxidized Se peaks demonstrating the successful removal of surface oxide overlayer on ZnSe.

引用

页码：2387 / 2389

页数：3

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