DISPLACEMENT THRESHOLDS IN SEMICONDUCTORS

[1] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1300 - 1309

[2] BROWN WL, 1957, B AM PHYS SOC 2, V2, P156

[3] CRAWFORD JH, 1957, PROGR SEMICONDUCTORS, V2

[4] EISEN FH, 1959, B AM PHYS SOC 2, V4, P160

[5] EISEN FH, UNPUBLISHED

[6] A SURVEY OF IRRADIATION EFFECTS IN METALS [J]. ADVANCES IN PHYSICS, 1955, 4 (16) : 381 - 477

[7] CREATION OF DISPLACEMENTS IN RADIATION DAMAGE [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1414 - 1415

[8] KLONTZ EE, 1952, THESIS PURDUE U

[9] KOHN W, 1954, PHYS REV, V94, P1409

[10] LARKHOROVITZ K, 1951, READING C SEMICONDUC

[1] ENERGY, ORIENTATION, AND TEMPERATURE DEPENDENCE OF DEFECT FORMATION IN ELECTRON IRRADIATION OF N-TYPE GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) : 1300 - 1309

[2] BROWN WL, 1957, B AM PHYS SOC 2, V2, P156

[3] CRAWFORD JH, 1957, PROGR SEMICONDUCTORS, V2

[4] EISEN FH, 1959, B AM PHYS SOC 2, V4, P160

[5] EISEN FH, UNPUBLISHED

[6] A SURVEY OF IRRADIATION EFFECTS IN METALS [J]. ADVANCES IN PHYSICS, 1955, 4 (16) : 381 - 477

[7] CREATION OF DISPLACEMENTS IN RADIATION DAMAGE [J]. PHYSICAL REVIEW, 1954, 93 (06): : 1414 - 1415

[8] KLONTZ EE, 1952, THESIS PURDUE U

[9] KOHN W, 1954, PHYS REV, V94, P1409

[10] LARKHOROVITZ K, 1951, READING C SEMICONDUC