THE EFFECT OF NONUNIFORM DOPING DENSITY ON ELECTRON-STATES IN N-TYPE SI INVERSION-LAYERS

被引：0
作者：
MURAMATSU, S
TORIUMI, T
机构：
[1] Department of Electrical and Electronic Engineering, Utsunomiya University, Utsunomiya
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 02期
关键词：
INVERSION LAYER; SUBBAND STRUCTURES; NONUNIFORM DOPING; MOS DEVICES;
D O I：
10.1143/JJAP.32.762
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Self-consistent numerical calculations of coupled Poisson and Schrodinger equations have been performed for electron states in n-type inversion layers on p-type silicon with a nonuniform doping density. The merits of a steplike doping profile consisting of low- and high-density regions are discussed.
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页码：762 / 763
页数：2
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