MECHANICAL-PROPERTIES AND DISLOCATION DYNAMICS OF III-V COMPOUND SEMICONDUCTORS

被引：34
作者：
YONENAGA, I
SUMINO, K
机构：
[1] Institute for Materials Research, Tohoku University, Sendai
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1992年 / 131卷 / 02期
关键词：
D O I：
10.1002/pssa.2211310236
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Mechanical properties of GaP, GaAs, InP, and InAs crystals are investigated by means of compressive deformation as a function of temperature and strain rate. The dynamic characteristics of dislocations are deduced from the analyses of strain rate cycling tests. The deformation of III-V compound semiconductors is controlled by dislocation processes which are essentially the same as those in elemental semiconductors such as Si, etc. The dislocation velocities which are the rate-controlling parameters in the deformation of semiconductors are deduced as function of stress and temperature from experimental results.
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页码：663 / 670
页数：8
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