PHOTOLUMINESCENCE FROM INP HEAVILY ION-IMPLANTED WITH MG+

被引:4
作者
YAMADA, A
MAKITA, Y
KIMURA, S
ASAKURA, H
MATSUMORI, T
BEYE, AC
MAYER, KM
机构
[1] TOKAI UNIV,FAC ENGN,HIRATSUKA,KANAGAWA 25912,JAPAN
[2] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
[3] ROBERT BOSCH GMBH,CENT RES LAB,W-7000 STUTTGART 10,GERMANY
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 9卷 / 1-3期
关键词
D O I
10.1016/0921-5107(91)90194-Z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ion-implantation of magnesium into extremely pure InP grown by the liquid-encapsulated Czochralski method was carried out with magnesium concentrations [Mg] ranging from 1 x 10(15) to 3 x 10(20) cm-3 with a maximum energy of 400 keV. Low temperature photoluminescence and Raman scattering measurements were performed on these samples. A new state of excitons bound to what was presumed to be a new type of acceptor g and an emission attributed to acceptor-acceptor pairs [g-g] were found below the bound exciton emission series. Two novel emissions located far below the band-to-acceptor emissions were also observed, and these showed remarkable energy shifts towards the lower energy side with increasing [Mg]. With heavily implanted samples, a strong broad emission of a new type was observed in the vicinity of the band-to-acceptor emissions.
引用
收藏
页码:319 / 323
页数:5
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