INTRINSIC ORIGIN OF VISIBLE-LIGHT EMISSION FROM SILICON QUANTUM WIRES - ELECTRONIC-STRUCTURE AND GEOMETRICALLY RESTRICTED EXCITON

被引：179

作者：

OHNO, T ^{[1
]}

SHIRAISHI, K ^{[1
]}

OGAWA, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, MUSASHINO ELECT COMMUN LAB, BASIC RES LABS, MUSASHINO, TOKYO 180, JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.69.2400

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We theoretically investigate excitonic effects on the optical properties of silicon quantum wires, based on ab initio electronic structure calculations. The Si wires have a direct, allowed band gap in the visible energy range and exhibit a strong optical anisotropy. Taking into account the electron-hole Coulomb interaction, the geometrical restriction of excitons dramatically enhances the oscillator strength of the optical transitions. Comparisons with recent experimental results are also made.

引用

页码：2400 / 2403

页数：4

共 25 条

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