STRAINED-LAYER INGAAS-GAAS-ALGAAS GRADED-INDEX SEPARATE CONFINEMENT HETEROSTRUCTURE SINGLE QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：29

作者：

OFFSEY, SD ^{[1
]}

SCHAFF, WJ ^{[1
]}

TASKER, PJ ^{[1
]}

ENNEN, H ^{[1
]}

EASTMAN, LF ^{[1
]}

机构：

[1] CORNELL UNIV,NATL NANOFABRICAT FAC,ITHACA,NY 14853

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 25期

关键词：

D O I：

10.1063/1.101083

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2527 / 2529

页数：3

共 19 条

[1]

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[2] CONTINUOUS, HIGH-POWER OPERATION OF A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER [J].

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[3] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[6]

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[7] STRAINED-LAYER INGAAS-GAAS-ALGAAS PHOTOPUMPED AND CURRENT INJECTION-LASERS [J].

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SIN, YK ;

LO, YC ;

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YANG, YJ .

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[8] EFFECTS OF WELL NUMBER, CAVITY LENGTH, AND FACET REFLECTIVITY ON THE REDUCTION OF THRESHOLD CURRENT OF GAAS/ALGAAS MULTIQUANTUM WELL LASERS [J].

KUROBE, A ;

FURUYAMA, H ;

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SUGIYAMA, N ;

KOKUBUN, Y ;

NAKAMURA, M .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (04) :635-639

[9] PROPERTIES OF INXGA1-XAS-GAAS STRAINED-LAYER QUANTUM-WELL-HETEROSTRUCTURE INJECTION-LASERS [J].

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CALDWELL, PJ .

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[10]

MCILROY PWA, 1985, IEEE J QUANTUM ELECT, V21, P1666

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