CURRENT FILAMENTS IN SEMICONDUCTORS

被引：19
作者：
BARNETT, AM
机构：
来源：
IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1969年 / 13卷 / 05期
关键词：
D O I：
10.1147/rd.135.0522
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Review of work that has been carried out on double-injection current filaments, emphasizing similar observations in direct- energy-gap semiconductor, gallium arsenide and indirect- gap semiconductor, silicon; experimental observations of current filaments occurring in low-current region, where current increases at constant voltage, and in high-current power- law region; simplified theory that considers current distribution of filament, and characteristic curve in high-current power- law region.
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页码：522 / +
页数：1
相关论文
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