ELECTRONIC BEHAVIOR OF SNS2 CRYSTALS

被引：40

作者：

ACHARYA, S

SRIVASTAVA, ON

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 65卷 / 02期

关键词：

D O I：

10.1002/pssa.2210650239

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：717 / 723

页数：7

共 16 条

[1] ELECTRONIC BANDGAP MEASUREMENTS OF SNS2 POLYTYPES [J].

ACHARYA, S ;

SRIVASTAVA, ON .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 56 (01) :K1-&

[2]

Balchin A. A., 1976, Crystallography and crystal chemistry of materials with layered structures, P1

[3]

Dubrovskii G. B., 1977, Soviet Physics - Solid State, V19, P729

[4]

EPIFANOV GI, 1979, SOLID STATE PHYSICS, P144

[5] DOUBLE INJECTION DIODES AND RELATED DI PHENOMENA IN SEMICONDUCTORS [J].

HOLONYAK, N .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (12) :2421-&

[6] VOLUME-CONTROLLED CURRENT INJECTION IN INSULATORS [J].

LAMPERT, MA .

REPORTS ON PROGRESS IN PHYSICS, 1964, 27 :329-367

[7] ON OPTICAL PROPERTIES OF SOME LAYER COMPOUNDS [J].

LEE, PA ;

SAID, G ;

DAVIS, R ;

LIM, TH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1969, 30 (12) :2719-+

[8] NEGATIVE RESISTANCE AND SWITCHING EFFECT IN SINGLE CRYSTAL LAYER COMPOUNDS SNS2 AND ZRS2 [J].

LEE, PA ;

SAID, G ;

DAVIS, R .

SOLID STATE COMMUNICATIONS, 1969, 7 (18) :1359-&

[9] DOUBLE INJECTION IN SEMICONDUCTORS [J].

MIGLIORATO, P ;

MARGARITONDO, G ;

PERFETTI, P .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) :656-663

[10] STRUCTURAL POLYTYPISM OF SNS2 [J].

MITCHELL, RS ;

FUJIKI, Y ;

ISHIZAWA, Y .

NATURE, 1974, 247 (5442) :537-538

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