SUBMICRO- AND NANOMETER E-BEAM LITHOGRAPHY AND REACTIVE ION ETCHING WITH SINGLE-LAYER CHEMICALLY AMPLIFIED NEGATIVE RESIST

被引：5

作者：

RANGELOW, IW

HUDEK, P

KOSTIC, I

BORKOWICZ, Z

STANGL, G

机构：

[1] Institute of Technical Physics, University of Kassel, 34 109 Kassel

[2] Institute of Computer Systems, SK-84 237 Bratislava

[3] Institute of Electron Technology, PL-50-372 Wroclaw

[4] Technical University of Vienna, A-1040 Vienna

来源：

MICROELECTRONIC ENGINEERING | 1994年 / 23卷 / 1-4期

关键词：

Composition effects - Electron beam lithography - Etching - Ion beams - Microstructure - Semiconducting gallium arsenide - Semiconducting silicon - Substrates;

D O I：

10.1016/0167-9317(94)90156-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this article we present results of Electron-Beam Lithographic (EBL) and Reactive Ion Etching (RIE) experiments on a single layer chemically amplified novolak-based negative 3-Component resist System (3CS). The resist type used was AZ PN114 from HOECHST AG. Direct, shaped-EBL generated single-layer resist-relief structures at 0,1 mu m and below were RIE and RIE with magnetic enhancement transferred (i) into bulk silicon and GaAs substrates and (ii) in 400 nm Nb - layer on SiO2/Si.

引用

页码：283 / 286

页数：4

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