DETECTION OF MINORITY-CARRIER TRAPS IN SEMICONDUCTORS

被引：6
作者：
LEMKE, H
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1980年 / 62卷 / 02期
关键词：
D O I：
10.1002/pssa.2210620223
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：539 / 545
页数：7
相关论文
共 6 条
[1]   FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022
[2]  
LEMKE H, 1981, PHYS STAT SOL A, V63
[3]   BULK AND INTERFACE IMPERFECTIONS IN SEMICONDUCTORS [J].
SAH, CT .
SOLID-STATE ELECTRONICS, 1976, 19 (12) :975-990
[4]   THERMAL AND OPTICAL EMISSION AND CAPTURE RATES AND CROSS SECTIONS OF ELECTRONS AND HOLES AT IMPERFECTION CENTERS IN SEMICONDUCTORS FROM PHOTO AND DARK JUNCTION CURRENT AND CAPACITANCE EXPERIMENTS [J].
SAH, CT ;
FORBES, L ;
ROSIER, LL ;
TASCH, AF .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :759-+
[5]   MEASUREMENT OF TRAPPED-MINORITY-CARRIER THERMAL EMISSION RATES FROM AU, AG, AND CO TRAPS IN SILICON [J].
YAU, LD ;
SAH, CT .
APPLIED PHYSICS LETTERS, 1972, 21 (04) :157-&
[6]   THERMAL EMISSION RATES AND ACTIVATION-ENERGIES OF ELECTRONS AND HOLES AT SILVER CENTERS IN SILICON [J].
YAU, LD ;
SAH, CT ;
SMILEY, CF .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02) :457-&
1