BROAD-BAND DETERMINATION OF THE FET SMALL-SIGNAL EQUIVALENT-CIRCUIT

被引：223
|
作者：
BERROTH, M
BOSCH, R
机构：
[1] Fraunhofer Institute for Applied Solid State Physics, Freiburg, Eckerstr. 4
来源：
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1990年 / 38卷 / 07期
关键词：
D O I：
10.1109/22.55781
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An improved method to determine the broad-band small-signal equivalent circuit of field effect transistors (FET's) is proposed. This method is based on an analytic solution of the equations for the Y parameters of the intrinsic device and allows direct determination of the circuit elements at any specific frequency or averaged over a frequency range. The validity of the equivalent circuit can be verified by showing the frequency independence of each element. The method can be used for the whole range of measurement frequencies and can even be applied to devices exhibiting severe low-frequency effects. © 1990 IEEE
引用
收藏
页码：891 / 895
页数：5
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